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参数资料
| 型号： | MBR30H50PT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 99K |
| 代理商： | MBR30H50PT |
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88792
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H35PT
MBR30H45PT
MBR30H50PT
MBR30H60PT
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward voltage
per diode (1)
IF = 20 A
IF = 30 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ =125 °C
VF
-
0.54
-
0.62
0.66
0.58
0.73
0.66
-
0.60
-
0.66
0.74
0.63
0.83
0.70
V
Maximum reverse current at rated VR
per diode (2)
TJ = 25 °C
TJ = 125 °C
IR
-
6.0
150
25
-
4.0
150
25
A
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35PT
MBR30H45PT
MBR30H50PT
MBR30H60PT
UNIT
Thermal resistance, junction to case
per diode
RθJC
1.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR30H45PT-E3/45
6.13
45
30/tube
Tube
Figure 1. Forward Current Derating Curve
0
10
20
30
40
025
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10
1
100
0
50
100
150
250
200
Number of Cycles at 60 Hz
P
e
ak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR30H60CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR30H60CT/45 | 功能描述:肖特基二极管与整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR30H60CT-E3/45 | 功能描述:肖特基二极管与整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR30H60CTG | 功能描述:二极管 - 通用，功率，开关 30A/60V H-SERIES RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MBR30H60CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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