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参数资料
| 型号： | MBR320 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 267-03, 2 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 121K |
| 代理商： | MBR320 |
MBR320 MBR330 MBR340 MBR350 MBR360
3
Rectifier Device Data
VR, REVERSE VOLTAGE (VOLTS)
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
0
2.0
1.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
TJ = 150°C
P
,
A
VERAGE
POWER
DISSIP
A
TION
(W
A
TTS)
F
(A
V)
dc
SQUARE
WAVE
020
10
30
40
50
70
300
TJ = 25°C
C,
CAP
ACIT
ANCE
(pF)
200
40
30
50
100
TA, AMBIENT TEMPERATURE (C°)
20
100
60
40
80
4.0
2.0
3.0
5.0
0
1.0
dc
SQUARE
WAVE
120
140
160
I
,
A
VERAGE
FOR
W
ARD
CURRENT
(AMPS)
F
(A
V)
VR REVERSE VOLTAGE (VOLTS)
020
10
30
40
0.002
0.005
0.01
0.05
0.02
0.10
0.50
0.20
20
10
5.0
2.0
1.0
25
°C
Figure 6. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.2
0
0.4
5.0
0.03
0.02
0.07
0.2
0.1
20
10
3.0
2.0
1.0
0.6
0.8
0.3
0.05
0.5
0.7
I
,REVERSE
CURRENT
(mA)
R
7.0
i
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
F
Figure 7. Typical Reverse Current*
Figure 8. Current Derating Ambient
(Mounting method #3 per note 1)
Figure 9. Power Dissipation
Figure 10. Typical Capacitance
1.0
1.2
1.4
*The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from
these same curves if VR is sufficiently below rated VR.
50
60
80
75
°C
100
°C
TJ = 150°C
TJ = 100°C
25
°C
75
°C
MBR350 AND 360
TJ = 150°C
RATED VR
RqJA = 28°C/W
0
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