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参数资料
| 型号： | MBR350RL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 81K |
| 代理商： | MBR350RL |
1
Rectifier Device Data
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16
″ from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: B350, B360
MAXIMUM RATINGS
Rating
Symbol
MBR350
MBR360
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
60
V
Average Rectified Forward Current, TA = 65°C
(R
θJA = 28°C/W, P.C. Board Mounting, see Note 3)
IO
3.0
A
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C)
IFSM
80
A
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
TJ, Tstg
*65 to 150°C
°C
Peak Operating Junction Temperature
(Forward Current applied)
TJ(pk)
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3)
R
θJA
28
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
MBR350
MBR360
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
0.600
0.740
1.080
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
iR
0.60
20
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR350/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBR350
MBR360
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
CASE 267–03
PLASTIC
MBR360 is a
Motorola Preferred Device
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR350RLG | 功能描述:肖特基二极管与整流器 3A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR350TR | 功能描述:DIODE SCHOTTKY 50V 3A C-16 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MBR350TR-M3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 3 A |
| MBR351 | 制造商:DCCOM 制造商全称:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| MBR3510 | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:SILICON BRIDGE RECTIFIERS |
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