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| 型号： | MBR360G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 59K |
| 描述： | DIODE SCHOTTKY 3A 60V DO-201AD |
| 产品目录绘图： | Rectifier DO-201AD Pkg |
| 标准包装： | 500 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 60V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 740mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 600µA @ 60V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 散装 |
| 产品目录页面： | 1568 (CN2011-ZH PDF) |
| 其它名称： | MBR360G-ND MBR360GOS |
?
Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 6
1
Publication Order Number:
MBR350/D
MBR350, MBR360
MBR360 is a Preferred Device
Axial Lead Rectifiers
These devices employ the Schottky Barrier principle in a large area
metal?to?silicon power diode. State?of?the?art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low?voltage,
high?frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
?
Extremely Low vF
?
Low Power Loss/High Efficiency
?
Highly Stable Oxide Passivated Junction
?
Low Stored Charge, Majority Carrier Conduction
?
Pb?Free Packages are Available*
Mechanical Characteristics:
?
Case: Epoxy, Molded
?
Weight: 1.1 Gram (Approximately)
?
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
?
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR350
MBR360
VRRM
VRWM
VR
50
60
V
Average Rectified Forward Current TA
= 65
°C
(RJA
= 28
°C/W, P.C. Board Mounting)
IO
3.0
A
Non?Repetitive Peak Surge Current (Note 1)
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, TL
= 75
°C)
IFSM
80
A
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
TJ, Tstg
?65 to
+150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction?to?Ambient
(see Note 4 ? Mounting Data, Mounting Method 3)
RJA
28
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 267?05
(DO?201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
A
MBR
3x0
A = Assembly Location
x = 5 or 6
= Pb?Free Package
(Note: Microdot may be in either location)
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR360-M3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 3 A |
| MBR360RL | 功能描述:肖特基二极管与整流器 3A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR360RLG | 功能描述:肖特基二极管与整流器 3A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR360RLG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 3A 60V DO-201AD |
| MBR360T3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Surface Mount Schottky Power Rectifier |
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