参数资料
型号: MBR4035PT-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 40 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD
封装: PLASTIC, TO-3P, 3 PIN
文件页数: 2/3页
文件大小: 55K
代理商: MBR4035PT-E3
MBR4035PT thru MBR4060PT
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88679
2
07-Feb-02
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I F
Instantaneous
Forward
Current
(A)
I R
Instantaneous
Reverse
Current
(mA)
Fig. 4 - Typical Reverse Characteristics
Per Leg
Fig. 1 - Forward Current Derating
Curve
A
verage
Forward
Current
(A)
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60 HZ
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Case Temperature (
°C)
Fig. 3 - Typical Instantaneous
Forward Characteristics Per Leg
Resistive or Inductive Load
T
ransient
Thermal
Impedance
(
C/W)
t — Pulse Duration (sec.)
Fig. 5 - Typical Junction Capacitance
Per Leg
pF
Junction
Capacitance
Reverse Voltage (V)
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Transient
Thermal Impedance Per Leg
Percent of Rated Peak Reverse Voltage (%)
Pulse width = 300
s
1% Duty Cycle
TJ = 150°C
TJ = 25°C
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
TJ = 25°C
TJ = 75°C
TJ = 125°C
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相关PDF资料
PDF描述
MBRB1060/31-E3 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB10H50-E3 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB1560CT/31-E3 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB16H35/81-E3 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB2090CT/45-E3 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
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