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参数资料
| 型号： | MBR4040PT |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 64K |
| 描述： | DIODE SCHOTTKY 40A 40V TO-3P-3 |
| 标准包装： | 30 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 700mV @ 20A |
| 电流 - 在 Vr 时反向漏电： | 1mA @ 40V |
| 电流 - 平均整流 (Io)（每个二极管）： | 40A |
| 电压 - (Vr)（最大）： | 40V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
DS23019 Rev. 8 - 2 1 of 3 MBR4030PT - MBR4060PT
www.diodes.com
Diodes Incorporated
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P
Q
K
S
M
H
R
D
C
Maximum Ratings and Electrical Characteristics
@ TA
= 25C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: TO-3P
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Ordering Information: See Last Page
Marking: Type Number
Weight: 5.6 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
MBR
4030PT
MBR
4035PT
MBR
4040PT
MBR
4045PT
MBR
4050PT
MBR
4060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 35 40 45 50 60 V
RMS Reverse Voltage
VR(RMS)
21 24.5 28 31.5 35 42 V
Average Rectified Output Current @ TC
= 125C
(Note 1)
IO
40 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
400 A
Forward Voltage Drop @ IF
= 20A, TC
= 25C
@ IF
= 20A, TC
= 125C
VFM
0.70
0.60
0.80
0.70
V
Peak Reverse Current @ TC
= 25C
at Rated DC Blocking Voltage @ TC
= 125C
IRM
1.0
100
mA
Typical Total Capacitance (Note 2)
CT
1100 pF
Typical Thermal Resistance Junction to Case (Note 1)
RJC
1.4
C/W
Voltage Rate of Change (Rated VR)
dV/dt 10,000 V/s
Operating and Storage Temperature Range
Tj,
TSTG
-65 to +150
C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
TO-3P
Dim Min Max
A
1.88 2.08
B
4.68 5.36
C
20.63 22.38
D
18.5 21.5
E
2.1 2.4
G
0.51 0.76
H
15.38 16.25
J
1.90 2.70
K
2.9
3.65
L
3.78 4.50
M
5.2 5.7
N
0.89 1.53
P
1.82 2.46
Q
2.92 3.23
R
11.70 12.84
S
6.10
All Dimensions in mm
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