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参数资料
| 型号： | MBR4050PT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 40 A, 50 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 80K |
| 代理商： | MBR4050PT |
MBR4030PT thru 4060PT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR
4030PT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
40
400
0.70
0.60
0.80
0.75
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
1.5
1.2
C/W
TJ =25 C
CJ
Typical Junction Capacitance
per element (Note 3)
700
pF
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
R0JC
dv/dt
10000
V/us
IF =20A @
IF =40A @
MBR
4035PT
35
24.5
35
MBR
4040PT
40
28
40
MBR
4045PT
45
31.5
45
MBR
4050PT
50
35
50
MBR
4060PT
60
42
60
V
0.80
0.70
-
1.0
100
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 40 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ =25 C
TJ =125 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 5, Oct-2010, KTH11
Per leg
Total
@TJ
=25 C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR4050PT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR4050PT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 50V 40A 3-Pin(3+Tab) TO-3P Tube |
| MBR4050PT/45 | 制造商:Vishay Semiconductors 功能描述:Diode Schottky 50V 40A 3-Pin(3+Tab) TO-247AD Tube |
| MBR4050PT_B0_10001#DELETED BY PJT# | 制造商:PanJit Touch Screens 功能描述: |
| MBR4050PT_Q | 功能描述:肖特基二极管与整流器 42 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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