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参数资料
| 型号： | MBR40H100WT-F |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 100 V, SILICON, RECTIFIER DIODE, TO-247AC |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 130K |
| 代理商： | MBR40H100WT-F |
Document Number: 94652
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 10-Dec-08
1
High Performance
Schottky Generation 5.0, 2 x 20 A
MBR40H100WT-F
Vishay High Power Products
FEATURES
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized VF vs. IR trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Fully lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
PRODUCT SUMMARY
IF(AV)
2 x 20 A
VR
100 V
Maximum VF at 20 A at 125 °C
0.67 V
TO-247AC
Anode
13
2
Base
common
cathode
4
Common
cathode
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
VRRM
100
V
VF
20 Apk, TJ = 125 °C (typical, per leg)
0.63
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MBR40H100WT-F
UNITS
Maximum DC reverse voltage
VR
TJ = 25 °C
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
per leg
IF(AV)
50 % duty cycle at TC = 144 °C, rectangular waveform
20
A
per device
40
Maximum peak one cycle
non-repetitive surge current
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
600
10 ms sine or 6 ms rect. pulse
200
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.5 A, L = 60 mH
67.5
mJ
Repetitive avalanche current
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
A
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相关代理商/技术参数 |
参数描述 |
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| MBR40H100WTG | 功能描述:肖特基二极管与整流器 40A 100V H-SER SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR40H35CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifiers |
| MBR40H35CT_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifiers |
| MBR40H35CT-E3 | 制造商:Vishay Intertechnologies 功能描述: |
| MBR40H35CT-E3/45 | 功能描述:肖特基二极管与整流器 35 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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