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参数资料
| 型号： | MBR40H60CT-E35/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 382K |
| 代理商： | MBR40H60CT-E35/45 |
Vishay General Semiconductor
MBR40H35CT thru MBR40H60CT
New Product
Document Number 88920
27-Mar-06
www.vishay.com
1
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
Dual Common-Cathode Schottky Rectifiers
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
20 A x 2
VRRM
35 V to 60 V
IFSM
350 A, 320 A
VF at IF = 20 A
0.55 V, 0.60 V
IR
100 A
Tj max
175 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR40H35CT
MBR40H45CT
MBR40H50CT
MBR40H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum average forward rectified
current (see Fig. 1)
Total device
Per leg
IF(AV)
40
20
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load
Per leg
IFSM
350
320
A
Peak repetitive reverse current per leg
at tp = 2 s, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge
energy (8/20 s waveform)
Per leg
ERSM
20
mJ
Non-repetitive avalanche energy
at 25 °C, IAS = 3.0 A, L = 5 mH
Per leg
EAS
22.5
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR40H60PT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR40H60PT-E3/45 | 功能描述:肖特基二极管与整流器 60 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR40L100CT | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 40Amp 100Volt |
| MBR40L100PT | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 40Amp 100Volt |
| MBR40L15CW | 功能描述:肖特基二极管与整流器 40 Amp 15 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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