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参数资料
| 型号： | MBR6080PT |
| 元件分类： | 整流器 |
| 英文描述： | 60 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 43K |
| 代理商： | MBR6080PT |
PAGE . 1
September 3,2010-REV.02
MBR6040PT SERIES
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency.
High current capability
Guardring for overvoltage protection
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
40 to 200 Volts
60 Amperes
MECHANICAL DATA
Case: TO-247AD / TO-3P molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.2245 ounces, 6.3673 grams.
Note :
Both Bonding and Chip structure are available.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RAMETE R
S YMB OL MBR6040PT MBR6045PT MBR6050PT MBR6060PT MBR6080PT MBR6090PT MBR60100PT MBR60150PT MBR60200PT UNITS
Ma xi mum Re curre nt P eak Re ve rse Vo ltage
V
RRM
40
45
50
60
80
90
100
1 50
200
V
Ma xi mum RMS Vo lta g e
V
RMS
28
31.5
35
42
56
63
70
105
1 40
V
Ma xi mum D C B lo cki ng Vo lta g e
V
DC
40
45
50
60
80
90
100
1 50
140
V
Ma xi mum A verage F o rward C urrent
I
F(AV )
60
A
Peak F o rward Surge C urre nt : 8.3ms si ng le
ha lf si ne -wave superi mposed on ra ted load
(JED EC me tho d )
I
FS M
400
A
Ma xi mum F o rward Vo ltage at 30A per le g
V
F
0.7
0 .7 9
0 .8
0.9
V
Ma xi mum D C Re ve rse C urrent at
Ra ted D C B locki ng Vo ltage
T
J= 25
OC
T
J= 100
OC
I
R
0.1
20
0.05
20
mA
Typ i ca l The rmal Re si sta nce
R
JC
1.5
OC / W
Operati ng Juncti on and S torage Te mperature
Ra ng e
T
J,TSTG
-5 5 to + 15 0
-65 to +175
OC
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.
600(
15.
2
5
)
0.
580(
14.
7
5
)
0.
839(21.
30)
0.
819(20.
80)
0.
170(4.
30)
0.
145(3.
70)
0.
7
9
8(20.
25)
0.
7
7(19.
75)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
相关PDF资料 |
PDF描述 |
|---|---|
| MBR6090PT | 60 A, 90 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR6040PT | 60 A, 40 V, SILICON, RECTIFIER DIODE |
| MBR6050PT | 60 A, 50 V, SILICON, RECTIFIER DIODE |
| MBR760 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 6TQ045 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR6080PTE3/TU | 制造商:Microsemi Corporation 功能描述:60A, 80V, VF=0.80V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 60A 80V TO-247AD |
| MBR6080R | 功能描述:肖特基二极管与整流器 80V - 60A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR6080ST | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR6090PT | 功能描述:肖特基二极管与整流器 60 Amp 90 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR6090PT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 90V 60A 3-Pin(3+Tab) TO-3P Tube |
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