参数资料
型号: MBR690FCT
元件分类: 整流器
英文描述: 6 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件页数: 1/2页
文件大小: 88K
代理商: MBR690FCT
PAGE . 1
STAD-APR.30.2009
MBR640FCT~MBR6200FCT
PRELIMINAR
Y
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
Exceeds environmental standards of MIL-S-19500/228
Low power loss, high efficiency.
Low forwrd voltge, high current capability
High surge capacity.
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
SCHOTTKY BARRIER RECTIFIERS
.027(.67)
.022(.57)
VOLTAGE
40 to 200 Volts
6.0 Ampers
CURRENT
MECHANICALDATA
Case: ITO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.055 ounces, 1.5615 grams.
NOTES : Both Bonding and Chip structure are available.
MAXIMUM RATINGSAND ELECTRICALCHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
R
E
T
E
M
A
R
A
PL
O
B
M
Y
S
T
C
F
0
4
6
R
B
MT
C
F
5
4
6
R
B
MT
C
F
0
5
6
R
B
MT
C
F
0
6
R
B
MT
C
F
0
8
6
R
B
MT
C
F
0
9
6
R
B
MT
C
F
0
1
6
R
B
MT
C
F
0
5
1
6
R
B
MT
C
F
0
2
6
R
B
M
S
T
I
N
U
e
g
a
tl
o
V
e
s
r
e
v
e
R
k
a
e
P
t
n
e
r
u
c
e
R
m
u
m
i
x
a
M
V
M
R
0
45
40
50
60
80
90
0
10
5
10
0
2V
e
g
a
tl
o
V
S
M
R
m
u
m
i
x
a
M
V
S
M
R
8
25
.
1
35
32
46
53
60
75
0
10
4
1V
e
g
a
tl
o
V
g
n
i
k
c
o
l
B
C
D
m
u
m
i
x
a
M
V
C
D
0
45
40
50
60
80
90
0
10
5
10
0
2V
)
1
e
r
u
g
i
F
e
S
(
t
n
e
r
u
C
d
r
a
w
r
o
F
e
g
a
r
e
v
A
m
u
m
i
x
a
M
I
)
V
A
(
F
0
.
6A
e
v
a
w
-
e
n
i
s
fl
a
h
e
l
g
n
i
s
m
3
.
8
:
t
n
e
r
u
C
e
g
r
u
S
d
r
a
w
r
o
F
k
a
e
P
)
d
o
h
t
e
m
C
E
D
E
J
(
d
a
o
l
d
e
t
a
r
n
o
d
e
s
o
p
m
i
r
e
p
u
s
I
M
S
F
5
7A
g
e
l
r
e
p
A
0
.
3
t
a
e
g
a
tl
o
V
d
r
a
w
r
o
F
m
u
m
i
x
a
M
V
F
0
7
.
05
7
.
00
8
.
00
9
.
0V
T
t
n
e
r
u
C
e
s
r
e
v
e
R
C
D
m
u
m
i
x
a
M
J
5
2
=
O C
T
e
g
a
tl
o
V
g
n
i
k
c
o
l
B
C
D
d
e
t
a
R
t
a
J
0
1
=
O C
I
R
5
0
.
0
2
A
m
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
l
a
c
i
p
y
Te
Rθ
C
J
3
O
W
/
C
n
o
it
c
n
u
J
g
n
it
a
r
e
p
Oe
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
d
n
aT
J T
,
G
T
S
0
5
1
+
o
t
5
-
5
7
1
+
o
t
5
6
-
O C
相关PDF资料
PDF描述
MBR730 7.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR745 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR740 7.5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRA120PBF 1 A, 20 V, SILICON, SIGNAL DIODE
MBRA120 1 A, 20 V, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
MBR7030WT 功能描述:二极管 - 通用,功率,开关 70A 30V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MBR7030WT_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier
MBR7030WTG 功能描述:二极管 - 通用,功率,开关 70A 30V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MBR7100 功能描述:肖特基二极管与整流器 7.0 Amp 100 Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR7150 功能描述:肖特基二极管与整流器 7.0 Amp 150 Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel