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参数资料
| 型号： | MBR735 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 352K |
| 描述： | DIODE SCHOTTKY 7.5A 35V TO-220AC |
| 标准包装： | 50 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 35V |
| 电流 - 平均整流 (Io)： | 7.5A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 840mV @ 15A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 35V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220AC |
| 包装： | 管件 |
MBR735 - MBR760 — Schottky Rectifiers
? 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MBR735 - MBR760 Rev. 1.1.0 1
June 2013
MBR735 - MBR760
Schottky Rectifiers
Features
? Low Power Loss, High Efficiency
? High Surge Capacity
? Metal Silicon Junction, Majority Carrier Conduction
? High Current Capacity, Low Forward-Voltage Drop
? Guard Ring for Over-Voltage Protection (OVP)
Applications
? Low-Voltage, High-Frequency Inverters
?
Free Wheeling and Polarity Protection
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
Value
Units
735 745 750 760
VRRM
Maximum Repetitive Reverse Voltage 35 45 50 60 V
IF(AV)
Average Rectified Forward Current 7.5 A
IFSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
150 A
Tstg
Storage Temperature Range -65 to +175
°C
TJ
Operating Junction Temperature -65 to +150
°C
Symbol Parameter Value Units
PD
Power Dissipation 2.0 W
RθJA
Thermal Resistance, Junction to Ambient 60
°C/W
RθJL
Thermal Resistance, Junction to Lead 3.0
°C/W
TO-220AC
1
2
PIIN2
PIIN1
Case
相关PDF资料 |
PDF描述 |
|---|---|
| MBR745 | DIODE SCHOTTKY 45V 7.5A TO220AC |
| MBR760 | DIODE SCHOTTKY 7.5A 60V TO220-2 |
| MBRA210LT3G | DIODE SCHOTTKY 10V 2A SMA |
| MBRA320T3G | DIODE SCHOTTKY 20V 3A SMA |
| MBRB2515L | DIODE SCHOTTKY 25A 15V D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR735 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube |
| MBR735 | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR735/45 | 功能描述:肖特基二极管与整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR735_07 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBR735_1 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:7.5 AMPS. Schottky Barrier Rectifiers |
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