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| 型号： | MBR750 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 165K |
| 描述： | DIODE SCHOTTKY 7.5A 50V TO220-2 |
| 标准包装： | 50 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 50V |
| 电流 - 平均整流 (Io)： | 7.5A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 750mV @ 7.5A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 50V |
| 电容@ Vr, F： | 400pF @ 4V，1MHz |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220AC |
| 包装： | 管件 |
| 其它名称： | MBR750DI |
MBR730 – MBR750
Document number: DS23007 Rev. 10 - 2
2 of 4
www.diodes.com
May 2013
? Diodes Incorporated
MBR730 –
MBR750
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
730
MBR
740
MBR
750
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
40
50
V
RMS Reverse Voltage
VR(RMS)
21
28
35
V
Average Rectified Output Current
(Note 4) @ TC
= +125°C
IO
7.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4)
RθJC
3.5
°C/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/μs
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
MBR
730
MBR
740
MBR
750
Unit
Forward Voltage Drop @ IF
= 7.5A, T
J
= +25°C
(Note 6) @ IF
= 7.5A, T
J
= +125°C
@ I
F
= 15A, T
J
= +25°C
@ I
F
= 15A, T
J
= +125°C
VFM
—
0.57
0.84
0.72
0.75
0.65
—
—
V
Peak Reverse Current @ TJ
= +25°C
at Rated DC Blocking Voltage @ TJ
= +125°C
IRM
0.1
15
0.5
50
mA
Typical Total Capacitance (Note 5)
CT
400
pF
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and app
lied reverse voltage of 4.0V DC.
6. Short duration pulse test used to minimize self-heating effect.
050100150
I, AVE
R
A
G
E
F
WD
C
U
R
R
EN
T
(A)
(AV)
T , CASE TEMPERATURE ( C)C
°
Fig. 1 Fwd Current Derating Curve
0
2
4
6
8
10
0.1
1.0
10
100
0.1 0.40.2
0.3
0.5
0.6 0.80.7
0.9
1.0
I, INS
T
AN
T
ANE
O
U
S
F
WD
C
U
R
R
EN
T
(A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)F
Fig. 2 Typ Instantaneous Fwd Characteristics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR750 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 50V 7.5A 2-Pin(2+Tab) TO-220A Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 50V 7.5A 2-Pin(2+Tab) TO-220A Tube |
| MBR750 | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR750/45 | 功能描述:肖特基二极管与整流器 50 Volt 7.5A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR750_Q | 功能描述:肖特基二极管与整流器 7.5 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR750-E3/45 | 功能描述:肖特基二极管与整流器 50 Volt 7.5A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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