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参数资料
| 型号： | MBR830 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 72K |
| 代理商： | MBR830 |
MBR830 thru MBR860
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
8
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Typical Thermal Resistance (Note 3)
3.0
C/W
R0JC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
VF
Maximum Forward
Voltage (Note 1)
0.57
V
0.84
V
TJ =25 C
TJ =125 C
IF =8A @
IF =16A @
MBR830
30
21
30
MBR835
35
24.5
35
MBR840
40
28
40
MBR845
45
31.5
45
0.70
Maximum Average Forward Rectified
Current at TC=125 C (See Fig.1)
TJ =25 C
MBR850
50
35
50
MBR860
60
42
60
0.70
0.95
0.80
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 8.0 Amperes
Typical Junction Capacitance (Note 2)
CJ
250
pF
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 1, Aug-2007, KTHA05
相关PDF资料 |
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| MBR840 | 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRA120TRPBF | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120TR | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120TR | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120TRPBF | 1 A, 20 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR830MFST1G | 制造商:ON Semiconductor 功能描述:8.0 A 30 V SCHOTTKY DIOD - Tape and Reel |
| MBR830MFST3G | 制造商:ON Semiconductor 功能描述:8.0 A 30 V SCHOTTKY DIOD - Tape and Reel |
| MBR835 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MBR835RL | 功能描述:DIODE SCHOTTKY 35V 8A DO201AD RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MBR840 | 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE 8A 40V TO-220A 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE, 8A, 40V, TO-220A 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE, 8A, 40V, TO-220A; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):8A; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:150A; No. of Pins:2 ;RoHS Compliant: Yes |
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