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参数资料
| 型号： | MBR840 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 72K |
| 代理商： | MBR840 |
RATING AND CHARACTERISTIC CURVES
MBR830 thru MBR860
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
A
M
P
E
R
E
S
25
75
100
125
150
2
0
50
8
175
8.3ms Single Half-Sine-Wave
6
0
4
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
0.2
0.4
1.2
1.4
1.0
10
100
0.6
0.8
1.0
0.1
1.8
1.6
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
0
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ = 25 C
10
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,(
m
A
)
20
40
120
140
0
0.001
0.1
1.0
100
10
60
80
100
TJ = 125 C
0.01
TJ = 25 C
MBR830 ~ MBR845
MBR850 ~ MBR860
FIG.5 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
1000
100
10
0.1
CASE TEMPERATURE , C
4
TJ = 25 C, f= 1MHz
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| MBRA120TRPBF | 1 A, 20 V, SILICON, SIGNAL DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR840CT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR840D | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER |
| MBR840DC | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER |
| MBR840F | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR840FCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
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