参数资料
型号: MBR845DT/R13
元件分类: 整流器
英文描述: 8 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
文件页数: 1/3页
文件大小: 119K
代理商: MBR845DT/R13
PAGE . 1
STAD-APR.30.2009
MBR840D~MBR8200D
PRELIMINAR
Y
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
Exceeds environmental standards of MIL-S-19500/228
Low power loss, high efficiency.
Low forwrd voltge, high current capability
High surge capacity.
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
VOLTAGE
40 to 200 Volts
CURRENT
8 Ampere
MECHANICALDATA
Case: TO-263/D2PAK molded plastic package
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.0514 ounces, 1.46 grams.
NOTES : Both Bonding and Chip structure are available.
MAXIMUM RATINGSAND ELECTRICALCHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
R
E
T
E
M
A
R
A
PL
O
B
M
Y
S
D
0
4
8
R
B
MD
5
4
8
R
B
MD
0
5
8
R
B
MD
0
6
8
R
B
MD
0
8
R
B
MD
0
9
8
R
B
MD
0
1
8
R
B
MD
0
5
1
8
R
B
MD
0
2
8
R
B
M
S
T
I
N
U
e
g
a
t
l
o
V
e
s
r
e
v
e
R
k
a
e
P
t
n
e
r
u
c
e
R
m
u
m
i
x
a
MV
M
R
0
45
40
50
60
80
90
0
10
5
10
0
2V
e
g
a
t
l
o
V
S
M
R
m
u
m
i
x
a
MV
S
M
R
8
25
.
1
35
32
46
53
60
75
0
10
4
1V
e
g
a
t
l
o
V
g
n
i
k
c
o
l
B
C
D
m
u
m
i
x
a
MV
C
D
0
45
40
50
60
80
90
0
10
5
10
0
2V
)
1
e
r
u
g
i
F
e
S
(
d
r
a
w
r
o
F
e
g
a
r
e
v
A
m
u
m
i
x
a
MI
)
V
A
(
F
8A
-
e
n
i
s
f
l
a
h
e
l
g
n
i
s
m
3
.
8
:
t
n
e
r
u
C
e
g
r
u
S
d
r
a
w
r
o
F
k
a
e
P
)
d
o
h
t
e
m
C
E
D
E
J
(
d
a
o
l
d
e
t
a
r
n
o
d
e
s
o
p
m
i
r
e
p
u
s
e
v
a
w
I
M
S
F
0
5
1A
A
0
.
8
t
a
e
g
a
t
l
o
V
d
r
a
w
r
o
F
m
u
m
i
x
a
MV
F
0
7
.
05
7
.
00
8
.
00
9
.
0V
T
t
n
e
r
u
C
e
s
r
e
v
e
R
C
D
m
u
m
i
x
a
M
J
5
2
=
OC
T
e
g
a
t
l
o
V
g
n
i
k
c
o
l
B
C
D
d
e
t
a
R
t
a
J
0
1
=
OC
I
R
5
0
.
0
2
A
m
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
l
a
c
i
p
y
Te
Rθ
C
J
3
O
W
/
C
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
d
n
a
n
o
i
t
c
n
u
J
g
n
i
t
a
r
e
p
OT
J T
,
G
T
S
0
5
1
+
o
t
5
-
5
7
1
+
o
t
5
6
-
O C
相关PDF资料
PDF描述
MBR8100DT/R13 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB1620CT 16 A, 20 V, SILICON, RECTIFIER DIODE
MBRB1645CT 16 A, 45 V, SILICON, RECTIFIER DIODE
MBRB2045CT-E3/31 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB2060CT SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
MBR845F 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS
MBR845FCT 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER
MBR845RL 功能描述:DIODE SCHOTTKY 45V 8A DO201AD RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)(最大):50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)(最大):1.4V @ 6A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座,接线柱安装 封装/外壳:DO-203AA,DO-4,接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879
MBR850 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:8.0A SCHOTTKY BARRIER RECTIFIER
MBR850CT 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER