参数资料
型号: MBR850DCT/R13
元件分类: 整流器
英文描述: 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
文件页数: 2/3页
文件大小: 121K
代理商: MBR850DCT/R13
PAGE . 2
STAD-APR.30.2009
MBR840DC~MBR8200DC
PRELIMINAR
Y
CAP
A
CIT
A
NCE
,
p
F
REVERSE VOLTAGE , VOLTS
1
2
5
10
20
50 100
400
350
300
250
200
150
0
200
500
Fig.5-TYPICAL JUNCTION CAPACITANCE
RATING AND CHARACTERISTIC CURVES
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
40
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.5
.6
.7
.8
.9
1.0
1.1
1.2
50V~60V
80V~100V
150V~200V
40V~45V
INST
ANT
ANEOUS
REVERSE
CURRENT
,m
A
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
120
140
10
1.0
0.1
.01
.001
0
20406080
100
T =100 C
J
O
T=
J
75 C
O
T=
J
25 C
O
CASE TEMPERATURE, C
O
10.0
8.0
4.0
0
2.0
6.0
0
20
40
60
80
100
120
140
160
180
A
VERAGE
F
OR
W
A
RD
RECTIFIED
CURRENT
AMPERES
=40V
= 45-200V
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
PEAK
FOR
W
ARD
SURGE
CURRENT
AMPERES
NO. OF CYCLE AT 60Hz
150
120
110
90
70
50
30
20
10
1
2
5
10
20
50
100
8.3ms Single
Half Since-Wave
JEDEC Method
相关PDF资料
PDF描述
MBR860 8 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR8150 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR845 8 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR890CT 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR8150CT 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
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