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参数资料
| 型号： | MBR890 |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 71K |
| 代理商： | MBR890 |
MBR870 thru MBR8100
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR870
70
49
70
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=110 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
8
125
0.85
0.75
0.95
0.85
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
TJ =25 C
CJ
Typical Junction Capacitance (Note 3)
280
pF
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR )
TJ =125 C
dv/dt
10000
V/us
IF =8A @
IF =16A @
V
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
100
mA
Typical Thermal Resistance (Note 2)
2.0
C/W
R0JC
TJ =25 C
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 8.0 Amperes
NOTES : 1. 300us Pulse Width, Duty Cycle 2%
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
TJ =125 C
MBR870
MBR880
80
56
80
MBR890
90
63
90
MBR8100
100
70
100
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 4, Aug-2007, KTHA09
相关PDF资料 |
PDF描述 |
|---|---|
| MBR850 | 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR880-BP | 8 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR870-BP | 8 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRA140TR | 1 A, 40 V, SILICON, SIGNAL DIODE |
| MBRB10100-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR890CT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR890D | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER |
| MBR890DC | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER |
| MBR890F | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR890FCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
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