收藏本站
参数资料
型号： MBRB10H60HE3/45
厂商： VISHAY SEMICONDUCTORS
元件分类： 整流器
英文描述： 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
封装： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数： 1/5页
文件大小： 131K
代理商： MBRB10H60HE3/45
MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
Document Number: 88780
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
100 A
TJ max.
175 °C
CASE
PIN 2
PIN 1
TO-220AC
MBR10Hxx
ITO-220AC
MBRF10Hxx
MBRB10Hxx
K
HEATSINK
PIN 1
PIN 2
1
2
1
2
K
PIN 2
PIN 1
TO-263AB
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H35
MBR10H45
MBR10H50
MBR10H60
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
10
A
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20 s waveform)
ERSM
20
10
mJ
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
相关PDF资料
PDF描述
MBRB10H60HE3/81 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB15H45CTHE3/45 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB15H50CTHE3/45 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB15H60CTHE3/81 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB2060CTHE3/81 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
相关代理商/技术参数
参数描述
MBRB10H90 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Schottky Rectifiers
MBRB10H90/31 功能描述:肖特基二极管与整流器 90 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H90/45 功能描述:肖特基二极管与整流器 90 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H90/81 功能描述:肖特基二极管与整流器 90 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H90CT 制造商:VAISH 制造商全称:VAISH 功能描述:MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*