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参数资料
| 型号： | MBRB10H90CT-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 517K |
| 代理商： | MBRB10H90CT-E3/45 |
MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88668
Revision: 08-Nov-07
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
,
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage per diode (1)
IF = 5.0 A
IF = 10 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.76
0.61
0.85
0.71
V
Maximum reverse current per diode at working peak
reverse voltage (1)
TJ = 25 °C
TJ = 100 °C
IR
3.5
4.5
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
2.2
5.2
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR10H100CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF10H100CT-E3/45
1.79
45
50/tube
Tube
TO-263AB
MBRB10H100CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB10H100CT-E3/81
1.35
81
800/reel
Tape reel
TO-220AB
MBR10H100CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF10H100CTHE3/45 (1)
1.79
45
50/tube
Tube
TO-263AB
MBRB10H100CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB10H100CTHE3/81 (1)
1.35
81
800/reel
Tape reel
Figure 1. Forward Derating Curve Per Diode
0
2
4
6
8
10
12
100
0
25
50
75
125
150
175
Case Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
MBR
MBRB
MBRF
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
25
50
75
100
125
150
175
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
相关PDF资料 |
PDF描述 |
|---|---|
| MBR10H35-E3 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR10H50 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR10H90-E3 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB10H90/31-E3 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB10H90/31 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
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| MBRB10H90-E3/31 | 功能描述:肖特基二极管与整流器 90 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB10H90-E3/45 | 功能描述:肖特基二极管与整流器 90 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB10H90-E3/81 | 功能描述:肖特基二极管与整流器 90 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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