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参数资料
| 型号： | MBRB1530CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 15 A, 30 V, SILICON, RECTIFIER DIODE |
| 封装： | D2PAK-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 37K |
| 代理商： | MBRB1530CT |
NOTES : 1. 300us Pulse Width, 2% Duty Cycle
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBRB1530CT thru 1545CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRB1530CT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=105 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage at (Note 1)
15
150
-
0.57
0.84
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal
Resistance
R0JA
2.0
C/W
TJ =25 C
CJ
Typical Junction Capacitance per element (Note 2)
300
pF
IR
@TJ =100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
V
A
V
UNIT
V
2
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
Junction to Case
Junction to Ambient
R0JC
dv/dt
MBRB1535CT
35
24.5
35
MBRB1540CT
40
28
40
MBRB1545CT
45
31.5
45
10000
50
V/us
C/W
D PAK
2
All Dimensions in millimeter
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
9.65
10.69
15.88
14.60
8.25
9.25
1.40
1.14
0.51
1.14
2.29
2.79
2.29
2.79
1.14
2.92
K
J
I
1.40
2.03
0.64
0.30
4.37
4.83
D PAK
2
K
J
I
H
F
D
C
A
G
E
B
PIN 1
PIN 2
K
HEATSINK
12
K
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 45 Volts
FORWARD CURRENT - 15 Amperes
IF =7.5A @
IF =15A @
TJ =25 C
TJ =125 C
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KTHB03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB1530CT_ | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| MBRB1530CT_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| MBRB1530CT-T | 功能描述:肖特基二极管与整流器 15A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB1535 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SCHOTTKY RECTIFIER |
| MBRB1535CT | 功能描述:肖特基二极管与整流器 15 Amp 35 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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