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参数资料
| 型号： | MBRB1560CT-HE3/81 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 492K |
| 代理商： | MBRB1560CT-HE3/81 |
MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
Document Number: 88670
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
50
100
150
0
5
10
15
20
25
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
50
25
75
100
125
150
175
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 60 Hz
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
Pulse Width = 300 s
1 % Duty Cycle
T
J = 125 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.1
1
10
100
10
100
1000
10 000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB16H35-E3/81 | 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H50CT-HE3/81 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2560CT-E3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF10H50-E3/45 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF1660-HE3/45 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB1560TR | 功能描述:DIODE SCHOTTKY 60V D2PAK 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:有效 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:60V 电流 - 平均整流（Io）:- 不同 If 时的电压 - 正向（Vf）:770mV @ 15A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5mA @ 60V 不同?Vr，F 时的电容:700pF @ 5V， 1MHz 安装类型:表面贴装 封装/外壳:TO-263-3，D2Pak（2 引线+接片），TO-263AB 供应商器件封装:D2PAK 工作温度 - 结:-55°C ~ 150°C 标准包装:1 |
| MBRB1580CT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:15 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRB15CTPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:SCHOTTKY RECTIFIER |
| MBRB15H35CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB15H35CT-E3/45 | 功能描述:肖特基二极管与整流器 35 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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