参数资料
型号: MBRB1635TRR
元件分类: 整流器
英文描述: 16 A, 35 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, SMD-220, D2PAK-3
文件页数: 2/7页
文件大小: 176K
代理商: MBRB1635TRR
Bulletin PD-2.319 rev. D 03/05
2
www.irf.com
MBR1635/ MBR1645, MBRB1635/ MBRB1645
I
F(AV) Max. Average Forward Current
16
A
@ T
C = 134 °C, (Rated VR)
I
FSM
Non-RepetitivePeakSurgeCurrent
1800
5s Sine or 3s Rect. pulse
Surgeappliedatratedloadconditionhalfwavesingle
phase60Hz
E
AS
Non-RepetitiveAvalancheEnergy
24
mJ
T
J = 25 °C, IAS = 3.6 Amps, L = 3.7 mH
I
AR
RepetitiveAvalancheCurrent
3.6
A
Currentdecayinglinearlytozeroin1sec
Frequency limited by T
J max. VA = 1.5 x VR typical
Absolute Maximum Ratings
Parameters
MBR16.. Units
Conditions
A
150
Part number
MBR1635
MBR1645
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
35
45
Voltage Ratings
Thermal-Mechanical Specifications
Parameters
MBR16.. Units
Conditions
Kg-cm
(Ibf-in)
T
J
Max. Junction Temperature Range
-65 to 150
°C
T
stg
Max. Storage Temperature Range
-65 to 175
°C
R
thJC Max. Thermal Resistance Junction
1.50
°C/W DCoperation
to Case
R
thCS Typical Thermal Resistance, Case
0.50
°C/W Mounting surface, smooth and greased
to Heatsink
wt
Approximate Weight
2 (0.07)
g(oz.)
T
MountingTorque
Min.
6 (5)
Max.
12 (10)
CaseStyle
TO-220AC,D2PAK JEDEC
MarkingDevice
MBR1645, MBRB1645
V
FM
Max. Forward Voltage Drop(1)
0.63
V
@ 16A
0.57
V
@ 16A
I
RM
Max. Instantaneus Reverse Current
0.2
mA
T
J =
25 °C
(1)
40
mA
TJ = 125 °C
C
T
Max. Junction Capacitance
1400
pF
V
R = 5VDC (test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R)
Electrical Specifications
Parameters
MBR16.. Units
Conditions
T
J =
25 °C
Rated DC voltage
(1) Pulse Width < 300s, Duty Cycle <2%
T
J = 125 °C
Following any rated load
condition and with rated
VRRMapplied
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