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参数资料
型号： MBRB1650/31
厂商： GENERAL SEMICONDUCTOR INC
元件分类： 参考电压二极管
英文描述： 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
文件页数： 2/3页
文件大小： 77K
代理商： MBRB1650/31
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR1635
MBR1645
MBR1650
MBR1660
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current at TC = 125 °CIF(AV)
16
A
Peak repetitive forward current at TC = 125°C
(rated VR, sq. wave, 20 KHz)
IFRM
32
A
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
150
A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg
at tp = 2.0s, 1KHZ
IRRM
1.0
0.5
A
Voltage rate of change (rated VR)
dv/dt
10,000
1,000
V/s
Operating junction temperature range
TJ
–65 to +150
°C
Storage temperature range
TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals to
4500 (NOTE 1)
heatsink with t = 1.0 second, RH
≤ 30%
VISOL
3500 (NOTE 2)
V
1500 (NOTE 3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR1635
MBR1645
MBR1650
MBR1660
Unit
Maximum instantaneous forward voltage per leg (Note 4)
at IF = 16A,
TC = 25°CVF
0.63
0.75
V
at IF = 16A,
TC = 125°C
0.57
0.65
Maximum instantaneous reverse current TC = 25°C
0.2
1.0
at rated DC blocking voltage (Note 4)
TC = 125°C
IR
40
50
mA
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance from junction to case per leg
RΘJC
1.5
3.0
1.5
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR1635 - MBR1660
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
MBRF1635 - MBRF1660
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB1635 - MBRB1660
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBR16xx, MBRF16xx
& MBRB16xx Series
Schottky Barrier Rectifier
相关PDF资料
PDF描述
MBRB2060CT/45 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
M15KP160A 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
M15KP170CAE3 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
M15KP240AE3TR 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
M15KP43CATR 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR
相关代理商/技术参数
参数描述
MBRB1650CT 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:DUAL SCHOTTKY RECTIFIERS
MBRB1650-E3/45 功能描述:肖特基二极管与整流器 16 Amp 50 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB1650-E3/81 功能描述:肖特基二极管与整流器 50 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB1650HE3/45 功能描述:肖特基二极管与整流器 50 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB1650HE3/81 功能描述:肖特基二极管与整流器 50 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
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