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参数资料
| 型号： | MBRB20100CTGTRLPBF |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, D2PAK,-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 144K |
| 代理商： | MBRB20100CTGTRLPBF |
MBR20...CTG, MBRB20...CTG, MBR20...CTG-1
Preliminary Data Sheet PD-20801 11/04
2
T
J
Max. Junction Temperature Range
-65 to 150
°C
Tstg
Max. Storage Temperature Range
-65 to 175
°C
R
thJC
Max. Thermal Resistance
2.0
°C/W DC operation
Junction to Case
(Per Leg)
R
thCS
Typical Thermal Resistance
0.50
°C/W Mounting surface, smooth and greased
Case to Heatsink
Only for TO-220
R
thJA
Max. Thermal Resistance
50
°C/W DC operation
Junction to Ambient
For D2Pak and TO-262
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Non-lubricated threads
Max.
12 (10)
Device Marking
MBR20...CTG
Case style TO-220
MBRB20...CG
Case style D2-Pak
MBR20...CG-1
Case style TO-262
Thermal-Mechanical Specifications
Parameters
Values
Units
Conditions
Kg-cm
(Ibf-in)
V
FM
Max. Forward Voltage Drop
0.80
V
@ 10A
(1)
0.95
V
@ 20A
0.70
V
@ 10A
0.85
V
@ 20A
I
RM
Max. Instantaneus Reverse Current
0.10
mA
TJ = 25 °C
(1)
6
mA
TJ = 125 °C
VF(TO) Threshold Voltage
0.433
V
T
J
= T
J
max.
rt
Forward Slope Resistance
15.8
m
CT
Max. Junction Capacitance
400
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ s (Rated VR)
Electrical Specifications
Parameters
Values
Units
Conditions
Rated DC voltage
T
J
= 25 °C
T
J
= 125 °C
(1) Pulse Width < 300s, Duty Cycle <2%
I
F(AV)
Max. Average Forward (PerLeg)
10
A
@ T
C
= 133° C, (Rated V
R
)
Current
(Per Device)
20
I
FRM
Peak Repetitive Forward
20
A
Rated VR, square wave, 20kHz
Current
(Per Leg)
TC = 133° C
I
FSM
Non Repetitive Peak
5s Sine or 3s
Surge Current
Rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60Hz
I
RRM
Peak Repetitive Reverse
0.5
A
2.0 sec 1.0 KHz
Surge Current
EAS
Non-Repetitive Avalanche Energy
24
mJ
T
J
= 25 °C, I
AS
= 2 Amps, L = 12 mH
(Per Leg)
Absolute Maximum Ratings
Following any rated load condition
and with rated VRRM applied
A
150
80
90
100
Voltage Ratings
Parameters
Values
Units
Conditions
MBR2080CTG
MBR2090CTG
MBR20100CTG
MBRB2080CTG
MBRB2090CTG
MBRB20100CTG
MBR2080CTG-1
MBR2090CTG-1
MBR20100CTG-1
850
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB20100CTGTRP | 功能描述:肖特基二极管与整流器 2x10 Amp 100 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20100CTGTRPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
| MBRB20100CTGTRR | 功能描述:肖特基二极管与整流器 20 Amp 100 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20100CTP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
| MBRB20100CTPBF | 功能描述:DIODE SCHOTTKY 100V 10A D2PAK RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:TMBS® 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
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