参数资料
型号: MBRB2060CT-E3/45
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 502K
描述: DIODE SCHOTTKY 20A 60V DUAL
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 800mV @ 10A
电流 - 在 Vr 时反向漏电: 150µA @ 60V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 60V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 管件
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
Document Number: 88674
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
? Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix
for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.70 V
TJ max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20xxCT
ITO-220AB
MBRF20xxCT
MBRB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
3
1
2
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT UNIT
Maximum repetitive peak reverse voltage VRRM
35 45 50 60 V
Working peak reverse voltage VRWM
35 45 50 60 V
Maximum DC blocking voltage VDC
35 45 50 60 V
Maximum average forward rectified
total device
current at TC
= 135 °C
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150 A
Peak repetitive reverse surge current per diode at
tp
= 2 μs, 1 kHz
IRRM
1.0 0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ
- 65 to + 150 °C
Storage temperature range TSTG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
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