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参数资料
| 型号： | MBRB2060CT-E3/81 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 500K |
| 代理商： | MBRB2060CT-E3/81 |
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88674
Revision: 08-Nov-07
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR2035CT MBR2045CT MBR2050CT MBR2060CT
UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.65
0.57
0.84
0.72
0.80
0.70
0.95
0.85
V
Maximum reverse current
per diode at rated DC
blocking voltage per diode (1)
TC = 25 °C
TC = 125 °C
IR
0.1
15
0.15
15
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical resistance from junction to case per diode
RθJC
2.0
5.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR2045CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF2045CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB2045CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB2045CT-E3/81
1.35
81
800/reel
Tape reel
TO-220AB
MBR2045CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF2045CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB2045CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB2045CTHE3/81 (1)
1.35
81
800/reel
Tape reel
Figure 1. Forward Derating Curve (Total)
0
4
8
12
20
0
50
100
150
16
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
60
40
80
140
120
100
160
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF2035CT-E3/45 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB2045CT-E3/81 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF2045CT-E3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2060CT-E3/45 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2060CTHE3/45 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB2060CTG | 功能描述:肖特基二极管与整流器 20A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2060CTG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRB2060CTHE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2060CTHE3/81 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2060CTT4 | 功能描述:肖特基二极管与整流器 20A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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