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参数资料
| 型号： | MBRB20H45CT-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 138K |
| 代理商： | MBRB20H45CT-HE3/45 |
New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88787
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H35CT
MBR20H45CT
MBR20H50CT
MBR20H60CT
UNIT
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR20H35CT
MBR20H45CT
MBR20H50CT
MBR20H60CT
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward voltage
per diode (1)
IF = 10 A
IF = 20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
-
0.49
-
0.62
0.63
0.55
0.75
0.68
-
0.57
-
0.68
0.71
0.61
0.85
0.71
V
Maximum reverse current
at rated VR per diode
(2)
TJ = 25 °C
TJ = 125 °C
IR
-
4.0
100
12
-
2.0
100
12
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance, junction to case per diode
RθJC
2.0
4.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR20H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF20H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB20H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB20H45CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR20H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF20H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB20H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB20H45CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB20H60CT-E3/81 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2550CT-E3/81 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H45CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF1560CT-HE3/45 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MCD-M1-K-9P5D8-18.0 | 9 CONTACT(S), MALE, D MICROMINIATURE CONNECTOR, SOLDER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB20H50CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB20H60CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBRB20H60CT-E3/81 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20H60CTHE3/81 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20H90CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
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