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参数资料
| 型号： | MBRB20H50CT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 85K |
| 代理商： | MBRB20H50CT |
MBR20HxxCT, MBRF20HxxCT & MBRB20HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88787
www.vishay.com
4-Feb-03
3
1
10
100
25
50
75
100
125
150
175
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
Number of Cycles at 60 HZ
Reverse Voltage (V)
P
eak
F
orw
ard
Surge
Current
(A)
0
5
10
15
20
25
025
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
0.01
0.1
0.1 0.2 0.3
0.4 0.5
0.6
0.7 0.8 0.9
1.0
1.1
0
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous
F
orw
ard
Current
(A)
Fig. 4 – Typical Reverse
Characteristics Per Leg
Instantaneous
Re
v
erse
Leakage
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
ranseint
Ther
mal
Impedance
(
°C/W)
pF
-
J
unction
Capacitance
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
100
0.1
1
10
100
1000
0.01
0.1
1
10
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
MBRF
MBR, MBRB
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相关PDF资料 |
PDF描述 |
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| MBRF30H45CT | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
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| MBRB1045 | 10 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB20H60CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBRB20H60CT-E3/81 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20H60CTHE3/81 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20H90CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBRB20H90CT/31 | 功能描述:肖特基二极管与整流器 90 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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