- 您现在的位置：买卖IC网 > PDF目录39584 > MBRB2545CT-E3/81 (VISHAY SEMICONDUCTORS) 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB PDF资料下载
参数资料
| 型号： | MBRB2545CT-E3/81 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 129K |
| 代理商： | MBRB2545CT-E3/81 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88675
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Jun-10
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) AEC-Q101 qualified
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
UNIT
Maximum instantaneous
forward voltage per diode
IF = 15 A
TC = 25 °C
VF (1)
-0.75
V
TC = 125 °C
-
0.65
IF = 30 A
TC = 25 °C
0.82
-
TC = 125 °C
0.73
-
Maximum instantaneous
reverse current at blocking
voltage per diode
TC = 25 °C
IR (1)
0.2
1.0
mA
TC = 125 °C
40
50
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance from junction to case per diode
RθJC
1.5
4.5
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR2545CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF2545CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB2545CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB2545CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR2545CT-E3/4W
1.85
4W
50/tube
Tube
TO-220AB
MBR2545CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF2545CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB2545CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB2545CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
UNIT
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB2545CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2560CT-E3/81 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF2535CT-E3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2545CT-E3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2550CT-E3/45 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB2545CTG | 功能描述:肖特基二极管与整流器 30A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2545CTHE3/45 | 功能描述:肖特基二极管与整流器 45 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2545CTHE3/81 | 功能描述:肖特基二极管与整流器 45 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2545CTHE3-/81 | 功能描述:肖特基二极管与整流器 45 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2545CTP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
发布紧急采购，3分钟左右您将得到回复。