参数资料
型号: MBRB2545CTHE3/81
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 128K
描述: DIODE SCHOTTKY 25A 45V DUAL
标准包装: 800
电压 - 在 If 时为正向 (Vf)(最大): 820mV @ 30A
电流 - 在 Vr 时反向漏电: 200µA @ 45V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 带卷 (TR)
Document Number: 88675 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Jun-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual Common-Cathode Schottky Rectifier
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
FEATURES
? Guardring for overvoltage protection
? Lower power losses, high efficiency
? Low forward voltage drop
? High forward surge capability
? High frequency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB
package)
? Complant to RoHS 2002/95/EC and in accordance to
WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 12.5 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.73 V at 30 A, 0.65 V at 15 A
TJ max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25xxCT
ITO-220AB
MBRF25xxCT
MBRB25xxCT
PIN 1
PIN 2
K
HEATSINK
1
32
1
2
K
TO-263AB
PIN 2
PIN 1
PIN 3
3
1
2
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Maximum repetitive peak reverse voltage VRRM
35 45 50 60
V
Working peak reverse voltage VRWM
35 45 50 60
Maximum DC blocking voltage VDC
35 45 50 60
Maximum average forward rectified current
at TC
= 130 °C
total device
I
per diode 12.5F(AV)
25
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp
= 2 μs, 1 kHz
IRRM
1.0 0.5
Peak non-repetitive
reverse energy (8
/20 μs waveform)
per diode
ERSM
25 mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 kΩ
VC
25 kV
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
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