参数资料
型号: MBRB2545CTTRLP
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 15 A, 45 V, SILICON, RECTIFIER DIODE
封装: LEAD FREE, PLASTIC, SMD-220, D2PAK-3
文件页数: 1/6页
文件大小: 103K
代理商: MBRB2545CTTRLP
Document Number: 93979
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 21-Aug-08
1
Schottky Rectifier, 2 x 15 A
MBRB25..CT/MBR25..CT-1
Vishay High Power Products
FEATURES
150 °C TJ operation
Center tap D2PAK and TO-262 packages
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Designed and qualified for Q101 level
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 15 A
VR
35/45 V
IRM
40 mA at 125 °C
MBRB25..CT
Base
common
cathode
D2PAK
TO-262
MBR25..CT-1
Anode
Common
cathode
1
3
2
Base
common
cathode
Anode
Common
cathode
1
3
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform (per device)
30
A
IFRM
TC = 130 °C (per leg)
30
VRRM
35/45
V
IFSM
tp = 5 s sine
1060
A
VF
30 Apk, TJ = 125 °C
0.73
V
TJ
Range
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBRB2535CT
MBR2535CT-1
MBRB2545CT
MBR2545CT-1
UNITS
Maximum DC reverse voltage
VR
35
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average
forward current
per leg
IF(AV)
TC = 130 °C, rated VR
15
A
per device
30
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz, TC = 130 °C
30
Non-repetitive peak surge current
IFSM
5 s sine or 3 s rect. pulse
Following any rated load condition
and with rated VRRM applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 2 A, L = 8 mH
16
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
2A
相关PDF资料
PDF描述
MBR2545CT-1 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA
MBRB2545CTTRRP 15 A, 45 V, SILICON, RECTIFIER DIODE
MBRB2550CT-E3/31 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB2560CT-E3/31 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB3030CTLTRLP 15 A, 30 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
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