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参数资料
| 型号： | MBRB2545CTTRR |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, SMD-220, D2PAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 110K |
| 代理商： | MBRB2545CTTRR |
MBR2545CT, MBRB2545CT, MBR2545CT-1
Bulletin PD-2.322 rev. C 01/03
2
www.irf.com
T
J
Max. Junction Temperature Range
-65 to 150
°C
T
stg
Max. Storage Temperature Range
-65 to 175
°C
R
thJC
Max. Thermal Resistance
1.5
°C/W DC operation
Junction to Case
(Per Leg)
R
thCS
Typical Thermal Resistance
0.50
°C/W Mounting surface, smooth and greased
Case to Heatsink
Only for TO-220
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Non-lubricated threads
Max.
12(10)
Thermal-Mechanical Specifications
Parameters
Values
Units
Conditions
Kg-cm
(Ibf-in)
Electrical Specifications
(1) Pulse Width < 300s, Duty Cycle <2%
I
F(AV)
Max.AverageForward
(PerLeg)
15
A
@T
C
=130°C,(RatedV
R
)
Current
(PerDevice)
30
I
FRM
Peak Repetitive Forward
30
A
Rated V
R
, square wave, 20kHz
Current
(Per Leg)
TC=130°C
I
FSM
Non Repetitive Peak
1060
5s Sine or 3s
Surge Current
Rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60Hz
E
AS
Non-RepetitiveAvalancheEnergy
16
mJ
(Per Leg) T
J
= 25 °C, I
AS
= 2 Amps, L = 8 mH
I
AR
RepetitiveAvalancheCurrent
2
A
Currentdecayinglinearlytozeroin1sec
(Per Leg)
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Parameters
Values
Units
Conditions
Following any rated load condition
and with rated VRRM applied
A
150
V
FM
Max. Forward Voltage Drop
0.82
V
@ 30A
T
J =
25 °C
(1)
0.73
V
@ 30A
T
J
= 125 °C
I
RM
Max. Instantaneus Reverse Current
0.2
mA
TJ = 25 °C
(1)
40
mA
T
J
= 125 °C
VF(TO) Threshold Voltage
0.355
V
T
J
= T
J
max.
rt
Forward Slope Resistance
12.3
m
CT
Max. Junction Capacitance
700
pF
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance8.0
nHMeasured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated VR)
Parameters
Values
Units
Conditions
Rated DC voltage
MBR2535CT
MBR2545CT
MBRB2535CT
MBRB2545CT
MBR2535CT-1
MBR2545CT-1
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
35
45
Voltage Ratings
Parameters
相关PDF资料 |
PDF描述 |
|---|---|
| MBR3035WT-G | 15 A, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR3035WT-S | 15 A, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR3035WT | 15 A, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR3045CT-1PBF | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBRB3035CTTRRPBF | 15 A, 35 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB2545CTTRRP | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 45V 30A 3-Pin(2+Tab) D2PAK T/R |
| MBRB2545CTTRRPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB2550CT | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:Dual Schottky Barrier Rectifiers |
| MBRB2550CT/31 | 功能描述:肖特基二极管与整流器 50 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2550CT/45 | 功能描述:肖特基二极管与整流器 25 Amp 50 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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