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参数资料
| 型号： | MBRB2550CT-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 129K |
| 代理商： | MBRB2550CT-HE3/45 |
Document Number: 88675
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Jun-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
6
18
12
30
0
50
100
150
24
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
Cu
rrent
(A)
Case Temperature (°C)
0
25
75
50
125
100
150
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
orw
ard
Surge
Current
(A)
100
10
1.0
0.1
0.01
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0
0.2
0.1
0.5
1.0
0.4
0.3
0.6
0.7
0.8
0.9
T
J = 150 °C
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous
F
orw
ard
Current
(A)
Instantaneous Forward Voltage (V)
1
10
100
0.01
0.001
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
20
0
100
40
60
80
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Instantaneous
Re
v
e
rse
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
10
1
100
1000
10 000
100
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/W)
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|---|---|
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| MBRB2050CT-HE3/81 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MQ1GZ130D10TR | 130 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
| MQ1GZ150D1E3 | 150 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB2560 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:25 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRB2560CT | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:Dual Schottky Barrier Rectifiers |
| MBRB2560CT/31 | 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2560CT/45 | 功能描述:肖特基二极管与整流器 25 Amp 60 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB2560CT/81 | 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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