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参数资料
| 型号： | MBRB25H45CT-E3/31 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 149K |
| 代理商： | MBRB25H45CT-E3/31 |
Document Number 88789
22-Aug-06
www.vishay.com
3
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
10
20
30
40
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Case Temperature (°C)
1
100
0
25
50
75
100
125
150
10
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
Tj = Tj max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
MBR25H35CT - MBR25H45CT
MBR25H50CT - MBR25H60CT
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
60
040
20
100
80
0.0001
0.001
0.1
0.01
1
10
100
MBR25H35CT -- MBR25H45CT
MBR25H50CT -- MBR25H60CT
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
0.1
1
100
10
1000
100
10000
MBR25H35CT -- MBR25H45CT
MBR25H50CT -- MBR25H60CT
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB30H60CT-E3/31 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB4045CTPBF | 20 A, 45 V, SILICON, RECTIFIER DIODE |
| MBRF10100 | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF10150-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF1045CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB25H45CTHE3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB25H45CTHE3/45 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB25H45CTHE3/81 | 功能描述:肖特基二极管与整流器 45 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB25H50CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB25H60CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
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