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参数资料
| 型号： | MBRB3035CTHE3/81 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 486K |
| 代理商： | MBRB3035CTHE3/81 |
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
Document Number: 88677
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
35 V, 45 V
IFSM
200 A
VF
0.60 V
TJ max.
150 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR3035CT
MBR3045CT
ITO-220AB
MBRF3035CT
MBRF3045CT
MBRB3035CT
MBRB3045CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR3035CT
MBR3045CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
V
Working peak reverse voltage
VRWM
35
45
V
Maximum DC blocking voltage
VDC
35
45
V
Maximum average forward rectified current
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
200
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
2.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
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相关代理商/技术参数 |
参数描述 |
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| MBRB3035CTP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3035CTPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3035CTPBF_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3035CTTRL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3035CTTRLP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
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