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参数资料
| 型号： | MBRB30H100CT-E3/31 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 151K |
| 代理商： | MBRB30H100CT-E3/31 |
www.vishay.com
2
Document Number 88791
22-Aug-06
Vishay General Semiconductor
MBR30H90CT & MBR30H100CT
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward
voltage per diode (1)
at IF = 15 A,
at IF = 30 A,
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
0.82
0.67
0.93
0.80
V
Maximum reverse current per diode at
working peak reverse voltage (1)
Tj = 25 °C
Tj = 125 °C
IR
5.0
6.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
1.9
4.6
1.9
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H100CT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
MBRF30H100CT-E3/45
1.99
45
50/Tube
Tube
TO-263AB
MBRB30H100CT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
MBRB30H100CT-E3/81
1.35
81
800/Reel
Tape Reel
Figure 1. Forward Derating Curve Per Diode
0
5
10
15
20
25
30
35
75
50
25
0
100
125
150
175
MBRF30H90CT - MBRF30H100CT
MBR30H90CT - MBR30H100CT
MBRB30H90CT - MBRB30H100CT
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
100
150
200
250
300
1
10
100
Tj = Tj max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB40100CT-G | 20 A, SILICON, RECTIFIER DIODE |
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| MBRB7H35-E3/31 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRD10U100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE |
| MBRD10U60CT | 5 A, 60 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB30H100CTHE3/45 | 功能描述:肖特基二极管与整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H100CTHE3/81 | 功能描述:肖特基二极管与整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H150CT-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBRB30H150CT-1/45 | 功能描述:肖特基二极管与整流器 150 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H30CT-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier 30 V, 30 A |
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