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参数资料
| 型号： | MBRB30H60CT/31 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 85K |
| 代理商： | MBRB30H60CT/31 |
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88866
www.vishay.com
10-Feb-03
3
1
10
100
0
25
50
75
100
125
150
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
Number of Cycles at 60 HZ
Reverse Voltage (V)
P
eak
F
orw
ard
Surge
Current
(A)
0
10
20
30
40
025
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous
F
orw
ard
Current
(A)
Fig. 4 – Typical Reverse
Characteristics Per Leg
Instantaneous
Re
v
erse
Leakage
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
ranseint
Ther
mal
Impedance
(
°C/W)
pF
-
J
unction
Capacitance
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
100
0.1
1
100
10
1000
100
10000
0.01
0.1
1
10
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
MBRF
MBR, MBRB
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
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