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参数资料
| 型号： | MBRB30H60CTHE3/81 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 566K |
| 描述： | DIODE SCHOTTKY 30A 60V |
| 标准包装： | 800 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 680mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 60µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Oct-12
1
Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
? Guardring for overvoltage protection
? Lower power losses,
high efficiency
? Low forward voltage drop
? Low leakage current
? High forward surge capability
? High frequency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
? AEC-Q101 qualified
? Material categorization: For
definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.56 V, 0.59 V
IR
80 μA, 60 μA
TJ
max. 175 °C
PIN 2
PIN 1
PIN 3
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR30HxxCT
ITO-220AB
MBRB30HxxCT
PIN 1
PIN 2
K
HEATSINK
1
32
1
2
K
MBRF30HxxCT
TO-263AB
3
1
2
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
Maximum repetitive peak reverse voltage VRRM
35 45 50 60 V
Working peak reverse voltage VRWM
35 45 50 60 V
Maximum DC blocking voltage VDC
35 45 50 60 V
Maximum average forward rectified
current (Fig. 1)
total device
Iper diode 15F(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150 A
Peak repetitive reverse surge current per diode
at tp
= 2 μs, 1 kHz
IRRM
1.0 0.5 A
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
25 20 mJ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB30H60CTT4G | 功能描述:肖特基二极管与整流器 30A/60V H-SERIES D2PAK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H80CT-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier 80 V, 30 A |
| MBRB30H80CT-1G | 功能描述:肖特基二极管与整流器 30A 80V H-SERIES I2PAK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H90CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBRB30H90CT/31 | 功能描述:肖特基二极管与整流器 90 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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