参数资料
型号: MBRB4045CTPBF
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 参考电压二极管
英文描述: 20 A, 45 V, SILICON, RECTIFIER DIODE
封装: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数: 2/6页
文件大小: 107K
代理商: MBRB4045CTPBF
www.vishay.com
For technical questions, contact: diodestech@vishay.com
Document Number: 94311
2
Revision: 09-Sep-09
MBRB4045CTPbF, MBR4045CT-1PbF
Vishay High Power Products Schottky Rectifier, 2 x 20 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
VFM (1)
20 A
TJ = 25 °C
0.60
V
40 A
0.78
20 A
TJ = 125 °C
0.58
40 A
0.75
Maximum instantaneous
reverse current
IRM (1)
TJ = 25 °C
Rated DC voltage
1
mA
TJ = 100 °C
50
TJ = 125 °C
95
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
900
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction temperature range
TJ
- 65 to 150
°C
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
1.5
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
(Only for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
(For D2PAK and TO-262)
50
Approximate weight
2g
0.07
oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf cm
(lbf in)
maximum
12 (10)
Marking device
Case style D2PAK
MBRB4045CT
Case style TO-262
MBR4045CT-1
相关PDF资料
PDF描述
MBRF10100 10 A, SILICON, RECTIFIER DIODE, TO-220AC
MBRF10150-G 10 A, SILICON, RECTIFIER DIODE, TO-220AC
MBRF1045CT 10 A, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10H150CT 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10H100CT 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
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