参数资料
型号: MBRB745PBF
元件分类: 整流器
英文描述: 7.5 A, 45 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, SMD-220, D2PAK-3
文件页数: 2/7页
文件大小: 81K
代理商: MBRB745PBF
MBR735/ MBR745, MBRB735/ MBRB745
Bulletin PD-2.325 rev. E 01/03
2
www.irf.com
VR
Max. DC Reverse Voltage (V)
35
45
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Parameters
MBR.735
MBR.745
I
F(AV)
Max.AverageForwardCurrent
7.5
A
@T
C
=131°C(RatedV
R
)
I
FSM
Non-RepetitivePeakSurgeCurrent
690
A
5s Sine or 3s Rect. pulse
150
Surgeappliedatratedloadconditionhalfwavesingle
phase60Hz
E
AS
Non-RepetitiveAvalancheEnergy
7
mJ
T
J
= 25 °C, I
AS
= 2 Amps, L = 3.5 mH
I
AR
RepetitiveAvalancheCurrent
2
A
Currentdecayinglinearlytozeroin1sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Parameters
MBR..
Conditions
Following any rated load
condition and with rated
VRRMapplied
V
FM
Max. Forward Voltage Drop(1)
0.84
V
@ 15A
T
J
= 25 °C
0.57
V
@ 7.5A
T
J
= 125 °C
0.72
V
@ 15A
I
RM
Max. Instantaneus Reverse Current
0.1
mA
T
J
= 25 °C
Rated DC voltage
(1)
15
mA
TJ = 125 °C
C
T
Max. Junction Capacitance
400
pF
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
1000
V/ s
(Rated V
R
)
Electrical Specifications
Parameters
MBR..
Conditions
(1) Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
MBR..
Conditions
Kg-cm
(Ibf-in)
T
J
Max.JunctionTemperatureRange
-65to150
°C
Tstg
Max.StorageTemperatureRange
-65to175
°C
R
thJC
Max.ThermalResistanceJunction
3.0
°C/W DCoperation
toCase
R
thCS
TypicalThermalResistance,Case
0.50
°C/W Mountingsurface,smoothandgreased
toHeatsink
wt
ApproximateWeight
2(0.07)
g(oz.)
T
MountingTorque
Min.
6(5)
Max.
12(10
Units
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