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参数资料
| 型号： | MBRD340TRR |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | PLASTIC, SIMILAR TO TO-252AA, DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 182K |
| 代理商： | MBRD340TRR |
MBRD320, MBRD330, MBRD340
Bulletin PD-20756 rev. F 05/06
2
www.irf.com
Part number
MBRD320
MBRD330
MBRD340
V
R
Max. DC Reverse Voltage (V)
20
30
40
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
TJ
Max.JunctionTemperatureRange(*) - 40 to 150
°C
Tstg
Max. Storage Temperature Range
- 40 to 175
°C
R
thJC Max. Thermal Resistance Junction
6.0
°C/W DC operation * See Fig. 4
to Case
R
thJA Max. Thermal Resistance Junction
80
°C/W
to Ambient
wt
Approximate Weight
0.3 (0.01)
g (oz.)
Case Style
D - PAK
Similar to TO-252AA
Device Marking
MBRD340
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
V
FM
Max. Forward Voltage Drop (1)
0.48
0.6
V
@ 3A
See Fig. 1
0.58
0.7
V
@ 6A
0.41
0.49
V
@ 3A
0.55
0.625
V
@ 6A
I
RM
Max. Reverse Leakage Current (1)
0.02
0.2
mA
TJ = 25 °C
See Fig. 2
10.7
20
mA
TJ = 125 °C
CT
Typical Junction Capacitance
189
-
pF
VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
L
S
Typical Series Inductance
5.0
-
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
-
10000
V/ μs
(Rated VR)
(1) Pulse Width < 300μs, Duty Cycle <2%
T
J =
25 °C
Electrical Specifications
Parameters
Typ.
Max.
Units Conditions
V
R = rated VR
T
J =
125 °C
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
I
F(AV) Max. Average Forward Current
3.0
A
50% duty cycle @ T
L = 133°C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
490
5μs Sine or 3μs Rect. pulse
Surge Current
75
10ms Sine or 6ms Rect. pulse
E
AS
Non Repetitive Avalanche Energy
8.0
mJ
T
J = 25 °C, IAS = 1Amp, L = 16mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J max. Va = 1.5 x Vr typical
Parameters
Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRMapplied
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRD340TRRPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 40V 3A 3-Pin(2+Tab) DPAK T/R |
| MBRD350 | 功能描述:肖特基二极管与整流器 3A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD350G | 功能描述:肖特基二极管与整流器 3A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD350L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:3 Amp Schottky Barrier Rectifier 20 |
| MBRD350RL | 功能描述:肖特基二极管与整流器 3A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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