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参数资料
| 型号： | MBRD350T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 149K |
| 描述： | DIODE SCHOTTKY 3A 50V DPAK |
| 产品目录绘图： | Rectifier D-Pak Pkg |
| 标准包装： | 2,500 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 50V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 600mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 200µA @ 50V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
     MBRD320G, SBRD8320G, MBRD330G, SBRD8330G, MBRD340G, SBRD8340G, MBRD350G, SBRD8350G, MBRD360G, SBRD8360G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MBRD/SBRD8 Unit 320 330 340 350 360 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 20 30 40 50 60 V Average Rectified Forward Current (TC = +125 ?C, Rated VR) IF(AV) 3 A Peak Repetitive Forward Current, TC = +125 ?C (Rated VR, Square Wave, 20 kHz) IFRM 6 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 s, 1 kHz) IRRM 1 A Operating Junction Temperature Range (Note 1) TJ ?65 to +175 ?C Storage Temperature Range Tstg ?65 to +175 ?C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction?to?Case RJC 6 ?C/W Maximum Thermal Resistance, Junction?to?Ambient (Note 2) RJA 80 ?C/W 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, T C = +25 ?C iF = 3 Amps, T C = +125 ?C iF = 6 Amps, T C = +25 ?C iF = 6 Amps, T C = +125 ?C VF 0.6 0.45 0.7 0.625 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25 ?C) (Rated dc Voltage, TC = +125 ?C) iR 0.2 20 mA 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0%. ORDERING INFORMATION Device Package Shipping? MBRD320G DPAK (Pb?Free) 75 Units / Rail SBRD8320G DPAK (Pb?Free) 75 Units / Rail MBRD320RLG DPAK (Pb?Free) 1,800 Tape & Reel MBRD320T4G DPAK (Pb?Free) 2,500 Tape & Reel SBRD8320T4G DPAK (Pb?Free) 2,500 Tape & Reel MBRD330G DPAK (Pb?Free) 75 Units / Rail SBRD8330G DPAK (Pb?Free) 75 Units / Rail |
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相关代理商/技术参数 |
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| MBRD360 | 功能描述:肖特基二极管与整流器 3A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD360001 | 制造商:ONS 功能描述:ON SEMICONDUCTOR NXD8D |
| MBRD360-001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MBRD360G | 功能描述:肖特基二极管与整流器 3A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD360G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
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