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| 型号： | MBRD360T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 149K |
| 描述： | DIODE SCHOTTKY 60V 3A DPAK |
| 产品目录绘图： | Rectifier D-Pak Pkg |
| 标准包装： | 10 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 60V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 600mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 200µA @ 60V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1567 (CN2011-ZH PDF) |
| 其它名称： | MBRD360T4GOSDKR |
     MBRD320G, SBRD8320G, MBRD330G, SBRD8330G, MBRD340G, SBRD8340G, MBRD350G, SBRD8350G, MBRD360G, SBRD8360G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MBRD/SBRD8 Unit 320 330 340 350 360 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 20 30 40 50 60 V Average Rectified Forward Current (TC = +125 ?C, Rated VR) IF(AV) 3 A Peak Repetitive Forward Current, TC = +125 ?C (Rated VR, Square Wave, 20 kHz) IFRM 6 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 s, 1 kHz) IRRM 1 A Operating Junction Temperature Range (Note 1) TJ ?65 to +175 ?C Storage Temperature Range Tstg ?65 to +175 ?C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction?to?Case RJC 6 ?C/W Maximum Thermal Resistance, Junction?to?Ambient (Note 2) RJA 80 ?C/W 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, T C = +25 ?C iF = 3 Amps, T C = +125 ?C iF = 6 Amps, T C = +25 ?C iF = 6 Amps, T C = +125 ?C VF 0.6 0.45 0.7 0.625 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25 ?C) (Rated dc Voltage, TC = +125 ?C) iR 0.2 20 mA 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0%. ORDERING INFORMATION Device Package Shipping? MBRD320G DPAK (Pb?Free) 75 Units / Rail SBRD8320G DPAK (Pb?Free) 75 Units / Rail MBRD320RLG DPAK (Pb?Free) 1,800 Tape & Reel MBRD320T4G DPAK (Pb?Free) 2,500 Tape & Reel SBRD8320T4G DPAK (Pb?Free) 2,500 Tape & Reel MBRD330G DPAK (Pb?Free) 75 Units / Rail SBRD8330G DPAK (Pb?Free) 75 Units / Rail |
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相关代理商/技术参数 |
参数描述 |
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| MBRD360T4G-CUT TAPE | 制造商:ON 功能描述:MBRD Series 3 A 60 V Tab Mount SWITCHMODE?Power Rectifier - CASE 369C |
| MBRD360TR | 功能描述:DIODE SCHOTTKY 60V 3A DPAK 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:60V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:650mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:1mA @ 60V 不同?Vr，F 时的电容:250pF @ 5V， 1MHz 安装类型:表面贴装 封装/外壳:TO-252-3，DPak（2 引线 + 接片），SC-63 供应商器件封装:DPAK 工作温度 - 结:-55°C ~ 150°C 标准包装:1 |
| MBRD460CT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:4A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER |
| MBRD460CT-T | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:4A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER |
| MBRD5100 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:Schottky Barrier Rectifier 20 to 100 Volts 5.0 Amp |
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