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参数资料
| 型号： | MBRD650CTRLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SWITCHMODE Power Rectifiers |
| 中文描述： | 6 A, 50 V, SILICON, RECTIFIER DIODE |
| 封装： | LEAD FREE, DPACK, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 65K |
| 代理商： | MBRD650CTRLG |
MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRD
Unit
620CT
630CT
640CT
650CT
660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
V
Average Rectified Forward Current
T
C
= 130
°
C (Rated V
R
)
Per Diode
Per Device
I
F(AV)
3
6
A
Peak Repetitive Forward Current, T
C
= 130
°
C
(Rated V
R
, Square Wave, 20 kHz) Per Diode
I
FRM
6
A
Nonrepetitive Peak Surge Current (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
I
FSM
75
A
Peak Repetitive Reverse Surge Current (2 s, 1 kHz)
I
RRM
1
A
Operating Junction Temperature
T
J
65 to +150
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS PER DIODE
Maximum Thermal Resistance JunctiontoCase
R
JC
6
°
C/W
Maximum Thermal Resistance JunctiontoAmbient (Note 1)
R
JA
80
°
C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 2)
i
F
= 3 Amps, T
C
= 25
°
C
i
F
= 3 Amps, T
C
= 125
°
C
i
F
= 6 Amps, T
C
= 25
°
C
i
F
= 6 Amps, T
C
= 125
°
C
V
F
0.7
0.65
0.9
0.85
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 25
°
C)
(Rated dc Voltage, T
C
= 125
°
C)
1. Rating applies when surface mounted on the minimum pad size recommended.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
0.1
15
mA
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