参数资料
型号: MBRD650CTTRR
元件分类: 参考电压二极管
英文描述: 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-252AA
封装: PLASTIC, SIMILAR TO TO-252AA, DPAK-3
文件页数: 4/7页
文件大小: 185K
代理商: MBRD650CTTRR
MBRD650CT, MBRD660CT
4
Bulletin PD-20755 rev. E 05/06
www.irf.com
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
(2)
Formula used: T
C = TJ - (Pd + PdREV) x RthJC;
Pd = Forward Power Loss = I
F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd
REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
Average Forward Current - I
F(AV) (A)
Allowable
Case
Temperature
(°C)
100
110
120
130
140
150
160
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (2)
0
0.5
1
1.5
2
2.5
3
01
234
5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average
Power
Loss
(Watts)
Average Forward Current - I
F(AV) (A)
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
Square Wave Pulse Duration - t
p (microsec)
Non-Repetitive
Surge
Current
-
I
FSM
(A)
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