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参数资料
| 型号： | MBRD650CTTRRPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | ROHS COMPLIANT, DPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 94K |
| 代理商： | MBRD650CTTRRPBF |
Document Number: 94314
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 08-Jul-09
1
Schottky Rectifier,
2 x 3 A
MBRD650CTPbF, MBRD660CTPbF
Vishay High Power Products
FEATURES
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
DESCRIPTION
The MBRD650CTPbF, MBRD660CTPbF surface mount,
center tap, Schottky rectifier series has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 3 A
VR
50/60 V
Base
common
cathode
Common
cathode
2
4
13
Anode
D-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
6
A
VRRM
50/60
V
IFSM
tp = 5 s sine
490
A
VF
3 Apk, TJ = 125 °C (per leg)
0.65
V
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBRD650CTPbF
MBRD660CTPbF
UNITS
Maximum DC reverse voltage
VR
50
60
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV)
50 % duty cycle at TC = 128 °C, rectangular waveform
3.0
A
per device
6
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
490
10 ms sine or 6 ms rect. pulse
75
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1 A, L = 12 mH
6
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.6
A
相关PDF资料 |
PDF描述 |
|---|---|
| MBRD660CTPBF | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| MBRD650TRRPBF | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-252AA |
| MBRD660TRR | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| MBRD860CTP | 4 A, 60 V, SILICON, RECTIFIER DIODE |
| MBRD850CTP | 4 A, 50 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRD660CT | 功能描述:肖特基二极管与整流器 6A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD660CTG | 功能描述:肖特基二极管与整流器 6A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD660CTG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRD660CT-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:6A DUAL SCHOTTKY BARRIER RECTIFIERS |
| MBRD660CTPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 6A 3-Pin(2+Tab) DPAK Tube 制造商:Vishay 功能描述:Diode Schottky 60V 6A 3-Pin (2+Tab) DPAK Bulk 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER CMN CTHD 6A D-PAK 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER, CMN CTHD, 6A, D-PAK 制造商:Vishay Intertechnologies 功能描述:MBRD660CTPbF Series 60 V 3 A Surface Mount Schottky Barrier Rectifier - D-PAK 制造商:Vishay 功能描述:Diode Schottky 60V 6A 3-Pin(2+Tab) DPAK Tube |
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