参数资料
型号: MBRD660CTTRL
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
封装: SIMILAR TO TO-252AA, DPAK-3
文件页数: 3/6页
文件大小: 65K
代理商: MBRD660CTTRL
MBRD650CT, MBRD660CT
3
Bulletin PD-20755 rev. C 03/03
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
Forward Voltage Drop - V
FM
(V)
Instantaneous
Forward
Current
-
I
F
(A)
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj = 150C
Tj = 125C
Tj = 100C
Tj = 25C
Reverse
Current
(mA)
Reverse Voltage - V
R
(V)
0.001
0.01
0.1
1
10
100
0
10
203040
5060
125C
100C
75C
50C
25C
Tj = 150C
Reverse Voltage - V
R
(V)
Junction
Capacitance
C
T
(pF)
10
100
1000
0
10
203040
5060
Tj = 25C
t
1
, Rectangular Pulse Duration (Seconds)
Thermal
Impedance
-
Z
thJC
(°C/W)
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x Z thJC + Tc
2
t
1
t
P
DM
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