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参数资料
| 型号： | MBRD660CTTRPBF |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | LEAD FREE, PLASTIC, SIMILAR TO TO-252AA, DPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 185K |
| 代理商： | MBRD660CTTRPBF |
MBRD650CT, MBRD660CT
4
Bulletin PD-20755 rev. E 05/06
www.irf.com
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
(2)
Formula used: T
C = TJ - (Pd + PdREV) x RthJC;
Pd = Forward Power Loss = I
F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd
REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
Average Forward Current - I
F(AV) (A)
Allowable
Case
Temperature
(°C)
100
110
120
130
140
150
160
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (2)
0
0.5
1
1.5
2
2.5
3
01
234
5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average
Power
Loss
(Watts)
Average Forward Current - I
F(AV) (A)
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
Square Wave Pulse Duration - t
p (microsec)
Non-Repetitive
Surge
Current
-
I
FSM
(A)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRD660CTTRR | 功能描述:肖特基二极管与整流器 6.0 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD660CTTRRPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 6A 3-Pin(2+Tab) DPAK T/R |
| MBRD6U60CT | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRD835L | 功能描述:肖特基二极管与整流器 8A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRD835L_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier |
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