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参数资料
| 型号： | MBRF10100-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 135K |
| 代理商： | MBRF10100-E3/4W |
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
Document Number: 89034
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
High-Voltage Schottky Rectifier
FEATURES
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AC and ITO-220AC
package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
MBR1090
MBR10100
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
MBRF1090
MBRF10100
PIN 2
PIN 1
TO-263AB
TO-220AC
ITO-220AC
TMBS
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
130
mJ
Peak repetitive reverse current
at tp = 2 s, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF1090-E3/4W | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF10200CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10U200CTA | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2050CT | 20 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF3050CT | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF10100-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBRF10100-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
| MBRF10150 | 功能描述:肖特基二极管与整流器 10 Amp 150 Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF10150 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 150V 10A 2-Pin(2+Tab) ITO-220AC Tube |
| MBRF10150CT | 功能描述:肖特基二极管与整流器 10 Amp 150 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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